X线

Mengling Xia1, Yuzhu Li1, Chenxing Li2

  • 1School of Materials Science and Engineering & State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China.

概括

新密度高的矿后半导体克服了传统材料在先进辐射检测方面的局限性. 这些材料保持了半导体特性,同时提高了X射线衰减和稳定性.