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在p型中通过电化学蚀刻制造高排序的巨孔阵列:晶圆电阻和其他蚀刻参数的影响

Jing Zhang^1,2, Faqiang Zhang¹, Mingsheng Ma^1,2

¹CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China.

|March 6, 2025

概括

使用电化学蚀刻制造了高度订购的宏性 (MPS) 阵列. 优化的参数产生了2:1比例MPS,用于光学和电子应用的高蚀刻率.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
半导体物理半导体物理

背景情况:

宏性 (MPS) 是一种多功能材料,在光学和电子领域具有应用.
制造高度订购的MPS结构对于先进的设备性能至关重要.
了解蚀刻参数对MPS形态的影响对于受控合成至关重要.

研究的目的:

在p型晶片中制造高度有序的巨孔阵列.
研究电阻,蚀刻电压和蚀刻时间对孔腔形态学的影响.
分析控制毛孔形成和形态演变的潜在机制.

主要方法:

在双电池中对p型晶片进行电化学蚀刻.
电阻,蚀刻电压和蚀刻时间的系统变化.
孔腔形态的分析,包括直径,深度和面积比.

主要成果:

孔径与电阻和蚀刻电压相反,这是由于空间电荷层宽度 (SCRL) 效应造成的.
孔深度随着电阻和电压的增加而增加,但过高的值可能导致尖端不足或孔隙分裂.
在5V蚀刻电压下,获得了2:1的面积比,电阻为50-80 Ω·cm.
记录了大约0.92微米/分钟的最大蚀刻速度.

结论:

电化学蚀刻为制造有序巨孔提供了一种可行的方法.
电阻和蚀刻电压是控制MPS形态的关键参数.
优化的蚀刻条件使MPS的生产能够具有特定的尺寸比率和高蚀刻速率,用于技术应用.

关键词:

电化学蚀刻电化学蚀刻电化学蚀刻顺序的宏孔数组.毛孔形态毛孔形态电阻的电阻率是

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