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Updated: Jul 10, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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对缺陷对高金属金属氧化物IGZO TFTs的影响的多尺度模拟

Chuanxue Sun1, Xiaoyu Dou1, Zhichao Du1

  • 1School of Information Science and Engineering (ISE), Shandong University, Qingdao 266237, China.

Micromachines
|March 6, 2025
PubMed
概括

在正偏向应力 (PBS) 下,印氧化薄膜晶体管 (IGZO TFT) 中的氧气空缺会导致负值电压变化和更低的移动性,影响设备可靠性. 了解这些缺陷是设计更稳定的IGZO TFTs的关键.

关键词:
伊格佐·伊格佐 (IGZO) 是一个高度金属金属氧化物 (EMMO) 的使用有空缺的氧气位积极偏见压力 (PBS)

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...