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Updated: May 24, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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TCAD模拟研究了一种新型高纯度漂移探测器的电性能

Mingyang Wang1, Zheng Li1,2, Bo Xiong1

  • 1School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.

Micromachines
|March 6, 2025
PubMed
概括

这项研究引入了一种新型的高纯度漂移探测器 (HPGeDD),以克服传统探测器中的电容问题. 该HPGeDD设计平衡了大活动面积和小容量,提高了辐射检测性能.

关键词:
电气性能的TCAD模拟重离子发生率重离子发生率.高纯度的日耳曼漂移探测器

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相关概念视频

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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