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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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在0.1μm GaAs pHEMT工艺上的偏差网络中使用双RC陷提高稳定性的W频段低噪声放大器
Seong-Hee Han1, Dong-Wook Kim1
1Department of Radio and Information Communications Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea.
Micromachines
|March 6, 2025
概括
双重RC陷有效地抑制了单立式微波集成电路 (MMIC) 中的振荡. 这使得稳定的W频段低噪声放大器 (LNA) MMIC能够用于精确的毫米波应用.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
- 半导体设备物理 半导体设备物理
背景情况:
- 单立式微波集成电路 (MMIC) 容易在各种频段发生振荡.
- 确保稳定性对于高精度毫米波应用至关重要.
研究的目的:
- 为了证明双RC陷在抑制MMIC振荡方面的有效性.
- 设计和开发一个高度稳定的W频段低噪声放大器 (LNA) MMIC.
主要方法:
- 在偏差网络中利用双RC陷来抑制振荡.
- 使用0.1μm GaAs pHEMT工艺设计了一个级联式四阶段W频段LNA MMIC.
- 使用稳定性因子 (K,μ) 和网络决定函数 (NDF) 包围分析评估稳定性.
主要成果:
- 在低噪音模式 (90-98 GHz) 中,实现了5.6-6.2 dB的噪声值和17.8-19.8 dB的线性增益.
- 在高增益模式下,实现了6.2-6.9dB的噪声值和19.8-21.7dB的线性增益.
- 通过双重RC陷集成证明了增强的稳定性.
结论:
- 精心设计的双RC陷对于抑制MMIC中的振荡是有效的.
- 开发的W频段LNA MMIC为毫米波应用提供了高稳定性和性能.
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