一个3.2-3.6 GHz的GaN多赫蒂功率放大器模块,基于一个紧的低损耗组合器
Xiyu Wang1, Dehan Wang1,2, Wenming Li2
1State Key Laboratory of Mobile Network and Mobile Multimedia Technology, Shenzhen 518055, China.
Micromachines
|March 6, 2025
概括
本研究介绍了用于5G基站的紧型3.2-3.6GHz双阶段多赫蒂功率放大器 (PA) 模块,使用GaN晶体管实现高增益和高效率.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
- 电信 电信服务 电信服务 电信服务
背景情况:
- 第五代 (5G) 大规模多输入多输出 (MIMO) 基站需要高效和紧的功率放大器.
- 现有的功率放大器设计在满足5G系统严格的性能要求方面可能面临挑战.
研究的目的:
- 为5G大规模MIMO基站提出和实施一个紧的,高性能的两级多赫蒂功率放大器 (PA) 模块.
- 详细设计了一个针对多赫蒂PA模块优化的低损耗组合器.
主要方法:
- 设计和实施一个紧的,低损耗的组合机.
- 将化 (GaN) 晶体管和表面安装设备 (SMD) 集成到一个8x8mm^2的多赫蒂PA模块中.
- 性能特征包括带宽,增益,输出功率和效率.
主要成果:
- 实现了3.1-3.9GHz的3dB小信号带宽.
- 和输出功率在3.2-3.6GHz频段中范围为40.4-41.1 dBm.
- 测量的和排水效率 (DE) 为51-56.6%和8dB的电源回收 (PBO) DE为45.5-48.6%.
结论:
- 拟议的多赫蒂PA模块符合5G大规模MIMO基站的苛刻要求.
- 紧的设计和高效率证明了GaN技术在下一代无线基础设施中的可行性.
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