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Updated: Jun 8, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

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在Ti3C2T-MoS2的介面定制的二次激发和超快的电荷/能量转移

Jiaxu Zhang1, Rafael Muñoz-Mármol2,3, Shuai Fu1

  • 1Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062 Dresden, Germany.

Journal of the American Chemical Society
|March 7, 2025
PubMed
概括

研究人员在等离子 (Ti3C2Tx) 和半导体 (MoS2) 异构结构中发现了二次激发和超快的电荷转移. 这项工作推动了先进的光电子和光化学设备的设计.

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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...