在WSe_{2}中单座空缺的层级依赖性收费状态寿命
Laric Bobzien1, Jonas Allerbeck1, Nils Krane1
1Empa - Swiss Federal Laboratories for Materials Science and Technology, nanotech@surfaces Laboratory, Dübendorf 8600, Switzerland.
在二维半导体中的空缺,如二化 (WSe2),表现出层依赖的电荷状态寿命. 从Se空位向石墨烯的电荷转移在单层WSe2中迅速发生,而在多层WSe2中寿命显著增加.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 量子化学 是一个量子化学.
背景情况:
- 2D半导体的缺陷工程对于调整光电子特性至关重要.
- 过渡金属二甲基化物 (TMDs) 中的素空缺显著影响电荷载体动态,并引入量子状态.
- 众所周知,WSe2中的空缺会影响晶体管性能,并表现出独特的光学反应.
研究的目的:
- 为了研究 (Se) 在化 (WSe2) 中的空缺 (Se) 的依赖层的电荷状态寿命.
- 了解WSe2层厚度对电荷转移动态和缺陷状态属性的影响.
- 量化TMD中石灰空缺的费用转移率.
主要方法:
- 使用扫描道光谱 (STS) 来测量在接近曲线中的电流和.
- 在WSe2单层,双层和四层样本中研究了Se空缺的电荷状态寿命.
- 分析了缺陷状态的依赖层的结合能量及其共振.
主要成果:
- 从Se空位到单层WSe2.2中的石墨烯基底物观察到超快速的电荷转移 (1±0.2ps).
- 发现电荷寿命从双层中的62±14 psi增加到四层WSe2.2中的纳秒.
- 随着WSe2层的增加,发现缺陷状态结合能量的减少.
- 归因于dI/dV光谱中的电流抑制和能量转移,在接近尖端-样本距离的电流和效应.
结论:
- 在WSe2中Se空缺的电荷状态寿命强烈依赖于层数.
- 在TMD中,电荷传递动态受到基板的接近和层间合的显著影响.
- 这些发现为控制先进的二维电子和光电子设备的缺陷特性提供了关键的见解.
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