大型道磁阻在非挥发性2D混合旋转过器中的磁阻
Xiaoyu Wang1, Lihao Zhang1, Miao He2,3
1Xi'an Jiaotong University, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Advanced Materials and Mesoscopic Physics, School of Physics, Xi'an 710049, China.
Physical review letters
|March 7, 2025
概括
研究人员使用2D铁磁金属Fe3GeTe2和半导体CrBr3.3开发了新的混合旋转波器. 这些非挥发性设备实现了大型道磁电阻 (TMR),用于先进的自旋电子应用.
科学领域:
- 这就是Spintronics.
- 两维材料是二维材料.
- 铁磁半导体 铁磁半导体
背景情况:
- 铁磁半导体通过旋转过实现了高旋转极化.
- 之前的研究使用了范德瓦尔斯反铁磁体 (例如,CRI3,CRSBr) 进行大型道磁阻 (TMR).
- 反铁磁状态的固有高阻力和挥发性限制了实际应用.
研究的目的:
- 使用2D铁磁金属Fe3GeTe2和半导体CrBr3.3制造新的混合旋转波器.
- 为了研究这些混合结构可以实现的非挥发性质和大TMR.
- 为了探索偏向电压调整的旋转注入和TMR极性逆转.
主要方法:
- 使用Fe3GeTe2和CrBr3.Br3结合的混合旋转波器的制造.
- 测量道磁阻 (TMR) 和其温度依赖性的测量.
- 使用扩展的朱利埃尔模型进行分析.
- 通过偏差电压调整的旋转注入特性的研究.
主要成果:
- 达到大约100%的大型TMR,具有非挥发性特征.
- TMR的温度依赖性被扩展的朱利埃尔模型描述得很好.
- 通过偏向电压和观察到的TMR极性逆转,证明了可调的旋转注入.
结论:
- 混合Fe3GeTe2/CrBr3旋转波器为大型TMR提供一种非挥发性的方法.
- 这些设备为开发基于2D磁性半导体的自旋电子技术提供了一个有前途的新途径.
- 调整自旋注入和观察极性逆转的能力提高了它们的应用潜力.
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