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Updated: May 23, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Published on: October 12, 2019

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在Ga2O3铁电接口中的偏差依赖带对齐通过操作HAXPES

Anthony Boucly1,2, Tyson C Back3, Thaddeus J Asel3

  • 1SPEC, CEA, CNRS, , Université Paris-Saclay, CEA Saclay, Gif-sur-Yvette, 91191, France. anthony.boucly@sorbonne-universite.fr.

Scientific reports
|March 7, 2025
PubMed
概括

这项研究研究了氧化物 (HZO) 对氧化物接口的作用. 电荷捕获防止铁电极化,导致带偏差诱导的带偏斜在带对齐.

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Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries09:51

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