在锡二硫化物中化使可见光探测器具有扩展的检测范围和高响应度
Mingchen Xu1, Xinfa Zhu1, Gaoning Fan1
1State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China.
ACS applied materials & interfaces
|March 10, 2025
概括
这项研究通过用 (Ni) 进行兴奋剂来增强二维锡二硫化物 (SnS2) 光探测器,扩大它们的光谱范围并改善成像和光通信应用的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 光电学是指光电子产品.
背景情况:
- 二维锡二硫化物 (SnS2) 光探测器具有高吸收性和薄度,但受到其内在带隙的限制.
- 扩大光谱检测范围对于光通信和成像中的实际应用至关重要.
研究的目的:
- 为了设计Ni-doped SnS2少数层,以缩小带隙并提高光检测器的性能.
- 制造和描述SnS2/Ni-doped SnS2的同型结构,以抑制暗电流和改善设备指标.
主要方法:
- 微机械剥皮被用于创建Ni-化SnS2少数层.
- Ni-doped SnS2光探测器和SnS2/Ni-doped SnS2同性结构光探测器的制造和表征.
- 带隙工程通过变化的Ni注度.
主要成果:
- 尼兴奋剂减少了SnS2的带隙从2.14 eV降至1.95 eV.
- 尼化SnS2光探测器显示出增强的响应能力 (2009年A W-1) 和检测能力 (2.47 × 1012厘米Hz1/2 W-1).
- 同体结构光探测器实现了3350 A W-1的响应能力,减少了暗电流 (110 nA),并实现了快速响应时间 (3.5 ms).
结论:
- Ni-doping是一种有效的策略,可以扩大基于SnS的光探测器的光谱检测范围.
- SnS2/Ni-doped SnS2同型结构显著提高光探测器的性能,超过现有的二维和商业设备.
- 开发的Ni-SnS2光探测器显示了先进的成像和可见光通信系统的潜力.
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