对Pb替代的LaO,F) BiS2的改进超导特性进行局部结构洞察:一项光电子全息研究

YaJun Li1,2, Yusuke Hashimoto3, Noriyuki Kataoka4

  • 1Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University, Tianshui, 741001, Gansu, China. xiaotaiyang@tsnu.edu.cn.

Scientific reports
|March 12, 2025
PubMed
概括

光电子全息显示, (Pb) 和 (F) 替代LaOFBiS2中的特定位置,影响其超导特性. 大约100K左右的结构转变会影响材料.