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Updated: May 22, 2025

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

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基于HfO2/SiO2的高分解和低泄漏的4H-SiC MOS电容器在沟结构中堆叠的门介电

Qimin Huang1,2,3, Yunduo Guo1,2,3, Anfeng Wang1,2,3

  • 1Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Nanomaterials (Basel, Switzerland)
|March 12, 2025
PubMed
概括

这项研究通过研究HfO2和SiO2/HfO2门介电物优化了碳化 (SiC) 沟沟MOSFET. SiO2 / HfO2堆显著改善了分解场和减少了泄漏电流,以提高设备性能.

关键词:
这就是ALD.MIS电容器的电容器是什么门介电器 门介电器高清高清高清高清沟 MOS 的情况.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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