在高事件功率下,Ge-on-Si光探测器的频率响应特征
Jin Jiang1, Hongmin Chen2, Fenghe Yang3
1Xiamen King Long United Automotive Industry Co., Ltd., Xiamen 361023, China.
Nanomaterials (Basel, Switzerland)
|March 12, 2025
概括
高信号功率通过影响载体速度来降低光探测器带宽. 增加偏移电压可以减轻这种效应,为高功率光电探测器提供设计见解.
科学领域:
- 光电学是指光电子产品.
- 半导体物理 半导体物理
背景情况:
- 光探测器对于光通信至关重要.
- 高信号功率可以降低光探测器的性能,限制其应用.
研究的目的:
- 在高光功率下研究在高光学功率下的光探测器中带宽减少背后的机制.
- 探索载体屏蔽和载体和漂移速度的作用.
- 为设计高功率光探测器提供指导.
主要方法:
- 利用模拟来研究载体屏蔽效应.
- 实验性地改变应用偏差电压以减轻带宽的减少.
- 分析了光生成载体度,漂移速度和带宽之间的关系.
主要成果:
- 带宽主要受到2.5mW事件功率以下的载波和漂移速度的限制.
- 观察到一种新奇的现象, photogenerated 载体的增加减少了漂移速度,影响了带宽.
- 载体屏蔽和减少漂移速度都会导致带宽减少,超过3mW.
结论:
- 这项研究阐明了在高光功率的光探测器中控制带宽减少的物理原理.
- 增加偏移电压是减轻带宽限制的有效策略.
- 这些发现为优化光探测器设计用于高功率应用提供了有价值的理论指导.
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