在多热源合下 3D 集成的 GaN 功率模块的特性
Yijun Shi1, Mingen Lv1,2, Guoguang Lu1
1China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.
Materials (Basel, Switzerland)
|March 13, 2025
概括
在3D集成化 (GaN) 功率模块中的相互加热降低了芯片性能. 热合转移值电压,减缓响应,减少电流,增加泄漏,影响设备的可靠性.
科学领域:
- 电力电子 电力电子 电力电子
- 半导体设备 半导体设备
- 热管理 热管理
背景情况:
- 3D集成的化 (GaN) 功率模块可以减少寄生虫和提高性能.
- 运行的GaN电源芯片产生热量,导致相互热合.
- 这种合可能会对GaN功率芯片的特性和整体系统可靠性产生负面影响.
研究的目的:
- 研究3D集成的GaN功率模块中的热合对GaN功率芯片特征的影响.
- 量化由相邻芯片产生的热量引起的性能降低.
主要方法:
- 在暴露于来自其他芯片的热应力之前和之后,GaN功率芯片的表征.
- 在60秒内应用特定的门源 (VGS) 和排水源 (VDS) 电压 (3V/1V),以诱导热合.
- 对值电压转移,响应速度,状态电流和泄漏电流的分析.
主要成果:
- 热合会导致门电压向右转移 (高达0.26V).
- 设备响应时间显著增加 (高达217μs),启动电流减少 (1.7A).
- 州外泄漏电流大幅增加 (超过80倍),其影响取决于芯片的近距离和位置.
结论:
- 在3D集成的GaN功率模块中的热合会对GaN功率芯片的性能产生不利影响.
- 性能下降更严重,因为芯片距离更近,并且芯片靠近底部基板.
- 了解和减轻热合对于可靠的3D集成GaN电源系统至关重要.
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