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通过元素兴奋剂改善BiSbTeSe₂的电传输性能

Peng Zhu^1,2, Xin Zhang^1,2, Liu Yang^1,2

¹Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.

Materials (Basel, Switzerland)

|March 13, 2025

概括

锡 (Sn) 或 (In) 兴奋剂增强了BiSbTeSe2拓绝缘体,改善了散装绝缘和表面电子流动性. 这些合晶体对拓学研究和未来的电子应用有前途.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

由于其独特的表面状态,拓绝缘体对于基础研究和先进应用至关重要.
现有的拓绝缘器往往缺乏足够的散装绝缘或高表面电子流动性,阻碍了进步.
BiSbTeSe2是一种有前途的材料,但其性能需要优化以实现实际使用.

研究的目的:

调查锡 (Sn) 和 (In) 兴奋剂对BiSbTeSe2单晶体特性的影响.
为了增强散装绝缘行为和表面电子流动性,以提高拓绝缘器性能.
评估杂BiSbTeSe2的潜力,用于基础研究和技术应用.

主要方法:

合成 (Sn) 或 (In) 合的BiSbTeSe2单晶.
使用先进的测量技术,系统地研究结构和电气传输特性.
分析散装载体密度和表面状态电子流动性的分析.

主要成果:

杂的BiSbTeSe2晶体保持了原始的晶体结构,没有观察到杂质阶段.
锡 (Sn) 注显著提高了性能,实现了~11 Ωcm的纵向电阻率 (ρxx),7.40 × 10^14 cm^-3的散货载体密度 (nb),6930 cm^2 的表面移动性 (μs).
(In) 兴奋剂也增强了性能,达到rxx ~13 Ωcm,nb ~1.29 × 10^15 cm^-3,和μs ~4500 cm^2/(Vs).

结论:

Sn-和In-doped的BiSbTeSe2晶体表现出增强的散装绝缘和表面电子流动性.
这些杂材料作为探索新型拓性质的优秀平台.
这些发现将被兴奋的BiSbTeSe2定位为低分散电子,自旋电子和量子计算的有希望的候选者.

关键词:

在 BiSbTeSe2 拓绝缘体中,载体密度载体密度载体密度化学兴奋剂化学兴奋剂移动性是一种流动性.

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