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Updated: May 22, 2025

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在无金属独立的烯复合电极中利用迪拉克半金属性,用于高性能超级电容器

Alpana Sahu1, Partha Pratim Borah1, Kalishankar Bhattacharyya1

  • 1Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India.

Nano letters
|March 13, 2025
PubMed
概括

灵活的超级电容器利用降解氧化石墨烯 (rGO) 上的烯纳米板来增强能量存储. 这种新的电极设计提供了高容量和稳定性,即使曲,为先进的灵活电子铺平了道路.

关键词:
玻罗芬是一种酸盐.国家密度的密度.放松时间的分布.灵活的超级电容器

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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