半斯勒窄带间隙半导体中的压电
1State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China.
概括
研究人员观察到窄带间隙半斯勒半导体中的压电效应. 这些材料具有很高的PE应变性和热稳定性,这表明了高级高温应用的潜力.
科学领域:
- 材料科学
- 凝聚物质物理学
- 固态化学
背景情况:
- 压电通常发生在非中心对称绝缘体或宽带间隙半导体中.
- 半豪斯勒 (HH) 材料是一种具有电子应用潜力的金属间化合物.
研究的目的:
- 在窄带间 HH 半导体中研究压电效应的存在和特征.
- 评估这些材料在传感器应用和高温环境中的潜力.
主要方法:
- 在TiNiSn,ZrNiSn和TiCoSb中实验观察和测量压电效应.
- 一个基于TiCoSb的压电传感器的制造和测试.
- 压电效应的热稳定性测试高达1173克尔文.
主要成果:
- 在TiNiSn,ZrNiSn和TiCoSb中观察到显著的压电效应.
- 对ZrNiSn (~38 pC/N) 和TiCoSb (~33 pC/N) 记录了高的剪切压电应变系数.
- 一个基于TiCoSb的传感器显示出相当大的电压响应和电容充电能力.
- 这些HH材料的压电效应在1173K保持稳定.
结论:
- 窄带间 HH 半导体表现出显著的压电效应.
- 这些材料具有高压电性能和优异的热稳定性.
- 高温半导体为开发先进的高温多功能设备和传感器提供了有前途的机会.
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