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Updated: May 22, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

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在石墨烯-hBN异构堆上的双向LEEM和eV-TEM光谱学.

Peter S Neu1, Eugene E Krasovskii2, Rudolf M Tromp3

  • 1Universiteit Leiden, Institute of Physics, Niels Bohrweg 2, Leiden, NL 2333 CA, Netherlands.

Ultramicroscopy
|March 13, 2025
PubMed
概括

我们研究了石墨烯-hBN异构堆,观察了层合产生的新兴特性. 电子光谱学揭示了对未被占用状态和不弹性损失的洞察力,这对于理解这些先进材料至关重要.

关键词:
干扰 干扰 干扰在LEMEM里.探测的深度探测的深度不被占领的州 不被占领的州范德瓦尔斯是什么意思 范德瓦尔斯在eV-TEM中使用.

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