在Ruddlesden Popper矿中增加Zr剂度以提高电阻随机访问记忆性能的影响:使用DFT方法
Fayyaz Hussain1, Aqsa Arooj2, Muhammad Imran3
1Materials Simulation Research Laboratory (MSRL), Institute of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, Pakistan.
Journal of molecular graphics & modelling
|March 13, 2025
概括
在Mg3Hf2O7中使用的兴奋剂增强了先进电阻切换记忆的导电性. Mg3Zr2O7表现出卓越的稳定性和性能,使其成为非挥发性内存应用的理想选择.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学的计算化学
背景情况:
- 电阻随机存取存储器 (RRAM) 是高性能存储器的一个关键技术.
- 了解材料特性对于优化RRAM设备至关重要.
研究的目的:
- 通过使用DFT,研究Zr-doped Mg3Hf2O7的结构,电子和光学特性.
- 评估这些材料在RRAM应用中的潜力.
主要方法:
- 密度函数理论 (DFT) 的计算.
- 分析结构性,电子性,光学性和机械性.
- 在Mg3Hf2O7.7中不同度 (0-1.0) 的Zr兴奋剂的模拟.
主要成果:
- 增加Zr兴奋剂可以减少带隙并提高导电性.
- Mg3Zr2O7表现出增加的导电通道和改善的导电性.
- Mg3Zr2O7具有高导电性,广泛吸收,低反射率和最小的形成能量,表明稳定性.
结论:
- Zr-doped Mg3Hf2O7,特别是Mg3Zr2O7,显示了RRAM应用的重大潜力.
- 增强的导电性和稳定性使Mg3Zr2O7成为非挥发性记忆的有希望的候选者.
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