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Updated: May 22, 2025

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
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Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Published on: October 3, 2015

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O/P-Si接触电气化的调制机制,通过接触电气连接处的紫外线激发的光载体进行电气化

Jia Tian1,2, Yue He1,2, Danyang Huang1,2

  • 1School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.

ACS applied materials & interfaces
|March 13, 2025
PubMed
概括

自动供电的紫外线 (UV) 光探测器使用 triboelectric 纳米发电机 (TENG). 这项研究阐明了UV光如何通过影响载体转移来调节TENGs,从而实现了更好的UV光检测应用.

关键词:
接触电气化 (CE) 是指接触电气化.接触电气连接器 (CEJ) 是一个电气连接器.电子转移是电子的转移.能量带图模型模型摄影刺激的使用光放松现象是一种光放松现象.

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Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity11:30

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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