在不对称边界下,从N极AlGaN/GaN HEMT中对太赫兹辐射进行数值研究
Runxian Xing1,2, Hongyang Guo3, Bohan Guo2
1School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Frontiers of optoelectronics
|March 14, 2025
概括
这项研究表明,N极AlGaN/GaN HEMT中的不对称边界可以产生太赫兹 (THz) 辐射. 优化设计可以导致千瓦功率的THz源.
科学领域:
- 半导体物理 半导体物理
- 特拉赫兹 (THz) 技术技术
- 等离子体波现象的现象
背景情况:
- 基于AlGaN/GaN异构的高电子移动性晶体管 (HEMT) 对高频电子非常重要.
- 这些设备中的等离子波激发为THz发射提供了一条途径.
研究的目的:
- 为了研究N极AlGaN/GaN HEMT中等离子体波的电刺激.
- 分析导致这些设备发出太赫兹辐射的条件.
- 探索设计参数,以优化THz辐射功率.
主要方法:
- 数字模拟解决麦克斯韦方程和一个自相一致的水力动力学模型.
- 在HEMT通道内分析等离子体波模型.
- 研究Dyakonov-Shur不稳定性的研究.
主要成果:
- 不对称的边界诱导N极AlGaN/GaN HEMT中的等离子波激发和THz发射.
- 在理想条件下,模拟预测了潜在的毫瓦发电.
- 关键参数如GaN厚度,载体度,门长度和速度显著影响THz输出.
结论:
- 该研究提供了N极AlGaN/GaN HEMTs中THz排放的理论框架.
- 模拟结果为设计高功率芯片THz源提供了有价值的指导.
- 这项研究推动了紧且高效的THz发射器的开发.
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