,NAlGaN/GaN HEMT

Runxian Xing1,2, Hongyang Guo3, Bohan Guo2

  • 1School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.

PubMed
概括

这项研究表明,N极AlGaN/GaN HEMT中的不对称边界可以产生太赫兹 (THz) 辐射. 优化设计可以导致千瓦功率的THz源.

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