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Updated: May 22, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Published on: April 12, 2018

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超低功率光电子记忆晶体管基于垂直WS2/In2Se3范德瓦尔斯异构结构

Xiudong Ma1, Yumeng Zhou1, Ru Li2

  • 1College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.

ACS applied materials & interfaces
|March 14, 2025
PubMed
概括

使用WS2 / In2Se3异构的光电子传感器模仿生物突触,功耗超低. 这些设备显示了先进的神经形态计算和强大的数据识别的前景.

关键词:
人工突触是一种人造突触.非挥发性的非挥发性.光电子传感器 (memtransistor) 是一种光电子传感器.超低功率的功率非常低.范德瓦尔斯异构结构的异构结构

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Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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