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Updated: May 22, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

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模拟和优化Ge/GaAs单行程载体光二极管的模型和优化

Yutong Zhang1, Mengxun Bai2, Hui Jia1

  • 1Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.

Scientific reports
|March 16, 2025
PubMed
概括

/甲单通行载体光二极管 (Ge/GaAs UTC-PDs) 以较低的成本提供高性能. 这项研究模拟了前置照明的Ge/GaAs UTC-PD,达到高达54GHz的带宽,非常适合未来的光通信.

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Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System

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相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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