深紫外线发光 基于hBN:S/hBN:Mg同质连接
Ransheng Chen1, Qiang Li1, Wannian Fang1
1Key Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an, 710049, China.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|March 17, 2025
概括
硫剂使六角化 (hBN) 的n型导电性成为可能,为深紫外线发射器铺平了道路. 多层 hBN:S 显示了增强的电子移位,以改善 n 型属性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体物理 半导体物理
背景情况:
- 六角化 (hBN) 是深紫外线 (深紫外线) 发射器的一个有前途的材料.
- 在hBN中实现n型导电性是一个重大挑战,阻碍了设备制造.
研究的目的:
- 在hBN中通过使用硫剂来实现n型导电性.
- 调查硫化hBN (hBN:S) 的结构和电气性能.
- 为了证明hBN:S在深紫外线发射器应用中的潜力.
主要方法:
- 密度函数理论 (DFT) 计算用于研究电子属性.
- 在蓝宝石基板上多层hBN:S的实验生长.
- 使用不同金属接触 (Ti和Ni) 的电特性.
主要成果:
- 由于S3p和B2p轨道合,DFT的计算显示了浅的供体能量水平.
- 与单层相比,多层hBN:S表现出增强的电子移位.
- 经过实验培养的hBN:S片显示了可测量的飞机内电流.
- 发现硫诱导的供体水平低于导电带最小值的0.349 eV.
结论:
- 硫化是一种有效的方法,可以在hBN中实现n型导电性.
- 多层hBN:S比单层hBN:S更适合n型传导.
- 一个垂直堆叠的n-hBN/p-hBN连接成功制造,显示出深紫外线发射器的前景.
相关概念视频
01:11P-N junction
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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01:16Biasing of P-N Junction
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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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