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Updated: May 22, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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堆叠的纳米板门-全方位形态相位边界场效应晶体管

Sihyun Kim1, Hyun-Min Kim2, Ki-Ryun Kwon2

  • 1Department of Electronic Engineering, Sogang University, Seoul, 04107, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|March 17, 2025
PubMed
概括

铁电-抗铁电混合相的氧化 (HZO) 提高了新型形态相边界场效应晶体管 (MPB-FET) 的性能. 这些设备显示出改善的电流,电压可扩展性和耐用性,用于低功耗电子产品.

关键词:
HZO,形态变异的相位边界.增强电容 - 提高电容有效的氧化物厚度.现场效应晶体管电晶体管门-全方位-周围高-κ,没有歇斯底里.一个纳米板.

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