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全宽带红外光探测器与内平面光子捕捉结构

Ke Deng^1,2,3, Jiaxiang Guo^1,3, Kun Zhang^1,3

¹State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.

Advanced materials (Deerfield Beach, Fla.)

|March 17, 2025

概括

本研究介绍了一种全光电探测器,具有内平面光子捕捉结构,用于在非常长波长红外 (VLWIR) 范围内的增强检测. 这种新的设计提高了紧,经济高效的光电子系统的灵敏度和工作温度.

科学领域:

光子学和光电学和光电子学.
材料科学材料科学材料科学

背景情况:

光子学对于光学通信和传感至关重要.
基于Si的红外光探测器是信号转换的关键.
在全Si设备中的VLWIR光检测在宽带增强和工作温度方面面临挑战.

研究的目的:

为VLWIR应用开发一个全Si光探测器.
为了提高检测效率和工作温度.
为了解决宽带增强和暗电流减少的问题.

主要方法:

一个采用全Si光探测器的设计,该光探测器包含在平面内的光子捕捉结构 (IPTS).
在12-19微米波长范围内的光电探测器性能的表征.
在降低温度下对特定检测能力和暗电流的评估.

主要成果:

在12-19微米范围内实现了285-575%的宽带增强.
观察到黑暗电流减少了31%.
峰值特异检测能力为1.9 × 10^10厘米Hz^1/2 W^-1在15μm和40K.

结论:

新的全Si光电子设备架构为VLWIR检测提供了一个有前途的解决方案.
证明了工作温度和灵敏度的改善.
这种设计使得VLWIR系统更紧,更具成本效益.

关键词:

全在芯片上的光检测.增强宽带检测,增强宽带检测.在平面中的光子捕捉结构.摄影探测器是一种光检测器.

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