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Updated: May 21, 2025

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缺陷模式的MoS2的侧向异构结构,用于高效的生产

Xiao Liu1,2, Jiayu Shi3, Yao Wu3

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.

Small (Weinheim an der Bergstrasse, Germany)
|March 18, 2025
PubMed
概括

在二硫化 (MoS2) 中的缺陷工程增强了演化反应 (HER) 催化. 精确的图案缺陷和兴奋剂创造了具有卓越性能的新横向异构结构.

关键词:
在这里,她是她.莫的职位空缺.在MoS2中,MoS2就是MoS2.他们使用了兴奋剂.侧向异构结构的异构结构.

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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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