范德瓦尔斯高-κ SrTiO3场效应晶体管的稳定性和可靠性与小的歇斯底里
Seyed Mehdi Sattari-Esfahlan1, Allen Jian Yang2, Rittik Ghosh1
1Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria.
ACS nano
|March 19, 2025
概括
酸 (STO) 作为二硫化物 (MoS2) 场效应晶体管 (FET) 的门绝缘体具有前景. 这项研究强调了STO.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米电子学纳米电子学
背景情况:
- 二维 (2D) 场效应晶体管 (FET) 需要可靠的门绝缘器来提高性能.
- 单晶酸 (SrTiO3或STO) 是一种超高κ介电,具有高分解强度和低接口陷密度的潜力.
研究的目的:
- 为了研究使用STO作为门绝缘体的MoS2FET的性能,稳定性和可靠性.
- 评估STO的潜力,以提高2D纳米电子设备的可靠性.
主要方法:
- 使用单晶 STO 门绝缘体的 MoS2 场效应晶体管的制造和表征.
- 电气性能测试,包括歇斯底里分析,扫描速率依赖性和偏差温度不稳定性 (BTI).
主要成果:
- 在MoS2/STO FET中观察到最小的歇斯底里,最高为8 MV cm-1,在长时间内可重现的动态.
- 异常的反时钟方向歇斯底里和BTI表明氧气空隙扩散是可能的原因.
- 证明了MoS2/STO FETs的高可靠性,表明STO适合要求高的应用.
结论:
- 单晶 STO 是一个非常有前途的门绝缘体,用于推进2D纳米电子的可靠性.
- STO的特性可能有助于克服下一代2D FET开发的关键挑战.
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