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The Hall Effect

The Hall Effect

Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.

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Updated: May 21, 2025

Experimental Methods for Investigation of Shape Memory Based Elastocaloric Cooling Processes and Model Validation

Experimental Methods for Investigation of Shape Memory Based Elastocaloric Cooling Processes and Model Validation

Published on: May 2, 2016

揭示了使用可变温度的ECRAM切换机制,用于加速AI计算的Hall测量.

Hyunjeong Kwak¹, Junyoung Choi¹, Seungmin Han¹

¹Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.

Nature communications

|March 20, 2025

概括

此摘要是机器生成的。

了解电化学随机访问内存 (ERAM) 切换机制是人工智能加速器的关键. 这项研究表明,氧化ERAM导电率的变化是由于载体的移动性和密度增加,由可逆结构变化驱动.

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Last Updated: May 21, 2025

Experimental Methods for Investigation of Shape Memory Based Elastocaloric Cooling Processes and Model Validation

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Published on: May 2, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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科学领域:

材料科学材料科学材料科学
固态物理固态物理
人工智能硬件硬件

背景情况:

由于稳定性和可编程性,电化学随机访问存储器 (ERAM) 设备对模拟人工智能 (AI) 加速器有希望.
由于复杂的多层结构和氧化物材料的高电阻性,了解ERAM切换机制是很困难的.

研究的目的:

为了阐明基于氧化的ERAM设备的切换机制.
确定影响ERAM在低温下电导电位增强的因素.

主要方法:

制造多终端大厅酒吧设备.
交替电流磁双极平行线霍尔测量用于运输参数提取.
可变温度的大厅测量.
密度函数理论 (DFT) 的计算.

主要成果:

在氧氧氧化物中确定了大约0.1 eV的氧气供体水平.
揭示了导电强化源于载体流动性和密度的增加,即使在低温下也是如此.
与可逆电子和原子结构修改相关的导电率变化.

结论:

增强对氧化中ERAM切换机制的理解.
提供了关于在模拟硬件中改进高性能,节能AI计算的见解.
证明了运营商动态和结构变化在ERAM操作中的作用.