在室温下在Ni/Gd接口上实验实现螺旋式磁结构
Surendra Singh1,2, Harsh Bhatt1,2, D Sarkar2,3
1Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India. surendra@barc.gov.in.
Physical chemistry chemical physics : PCCP
|March 20, 2025
概括
研究人员在/加多多层中观察到室温的扭曲磁相. 这种在稀土/过渡金属系统中的发现可以推进磁性记忆技术.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 稀土 (RE) 和过渡金属 (TM) 系统通常表现出强烈的反铁磁交换相互作用.
- 这些相互作用往往导致增强的库里温度和复杂的磁性结构.
研究的目的:
- 在室温下研究Ni/Gd多层的结构和磁性特性.
- 通过使用深度分析技术,探索界面上的磁相的存在和性质.
主要方法:
- 极化中子反射率 (PNR) 测量用于深度分析.
- 使用自旋依赖PNR和扩散PNR来分析接口属性.
- 一维 (1D) 基于旋转的模型计算支持了实验结果.
主要成果:
- 在Ni/Gd接口发现了混合和远程有序磁性的证据.
- 在接口上确定了一个扭曲的磁相,由Ni-Gd反铁磁交换驱动.
- 发现在接口的结构和磁性粗性之间没有相关性.
结论:
- 该研究证明了在RE/TM系统中在室温下实现扭曲磁相.
- 这种扭曲的阶段可以显著影响温度依赖的磁性特性.
- 这些发现为用于磁性存储应用的全光电子产品中操纵磁性特性提供了一条途径.
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