相关实验视频

Updated: Jul 8, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

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Published on: November 1, 2013

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高性能突触阵列用于通过浮式门工程IGZO突触晶体管通过神经形态计算.

Junhyeong Park1, Yumin Yun1, Sunyeol Bae1

  • 1Department of Electrical and Computer Engineering, and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|March 20, 2025
PubMed
概括

新的--氧化物 (IGZO) 突触晶体管与-氧化物 (ITO) 浮式门改善了神经形态计算. 这些人造突触克服了保留问题,在神经网络模拟中实现了高精度.

关键词:
在GaZnO (IGZO) 中.神经形态计算是一种神经形态计算.尖的神经网络的神经网络.突触阵列是一个突触阵列.突触晶体管的突触晶体管是什么

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