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Updated: Apr 30, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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在近红外III-V体量子点光探测器中改进了侧面和边缘被动化

Pan Xia1, Sasa Wang1, Yiqing Chen1

  • 1Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada.

Advanced materials (Deerfield Beach, Fla.)
|March 24, 2025
PubMed
概括

研究人员为大型化 (InAs) 体量子点开发了一种混合化物被动化,提高了近红外光探测器的稳定性和性能. 这一突破改善了先进的SWIR成像应用的抗氧化和设备寿命.

关键词:
III-V QD 的时间表.在InAs QD中.化物被动化被动化高性能的高性能性能.红外光电探测器 红外光电探测器

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Photoluminescence: Applications01:14

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Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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