Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

655
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
655

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Uncovering the role of ABI2 as a key regulator of flowering time in Arabidopsis.

Plant signaling & behavior·2026
Same author

YOLOv10-based multi-scale variant object detection for multi-category PPE non-compliance monitoring on construction sites.

Scientific reports·2026
Same author

TiO<sub>2</sub> nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory.

Nano convergence·2026
Same author

Unveiling the epigenetic and stress-responsive function of histone H1 in plants.

Plant signaling & behavior·2026
Same author

Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.

Nature communications·2026
Same author

Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field Activation.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

DNAzyme-Enhanced CRISPR/Cas12a Cascade Enables Isothermal, One-Pot RNA Diagnostics.

ACS applied materials & interfaces·2026
Same journal

Continuous π-Conjugation in β-Ketoenamine Covalent Organic Frameworks Boosts Charge Transfer for Selective Photocatalysis.

ACS applied materials & interfaces·2026
Same journal

Scalable Ionogel-Based Thermochromic Smart Windows: Enhanced Solar Regulation, Weatherability, and Processability.

ACS applied materials & interfaces·2026
Same journal

Metal-Organic Framework Monoliths Derived from Emulsion-Templated Foams for Reactive Filtration.

ACS applied materials & interfaces·2026
Same journal

Binary to Quaternary Rare-Earth Phosphates: Compositional Effects on Thermal Properties and CMAS Corrosion Resistance of Environmental Barrier Coatings.

ACS applied materials & interfaces·2026
Same journal

Suture-Free Piezoelectric Band-Aid Membrane for Complex Peripheral Nerve Defects.

ACS applied materials & interfaces·2026
查看所有相关文章

相关实验视频

Updated: May 20, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

为高可靠的QLC 3D V-NAND使用绕道电阻随机访问内存进行战略材料设计.

Geonhui Han1, Jongseon Seo1, Junghoon Park2

  • 1Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea.

ACS applied materials & interfaces
|March 24, 2025
PubMed
概括
此摘要是机器生成的。

研究人员开发了电化学随机访问存储器 (ECRAM) 的设计准则,以实现V-NAND闪存中的统一四级单元 (QLC) 操作. 这一突破可以精确控制氧空位迁移,从而提高记忆性能.

关键词:
在3D V-NAND中使用.在QLC中,QLC是QLC.WOx WOx WOx 在线播放绕过RRAM可以绕过RRAM.电化学随机访问存储器记忆器件是一个内存设备.

更多相关视频

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.8K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K

相关实验视频

Last Updated: May 20, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.8K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K

科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 固态物理 固态物理

背景情况:

  • 传统的闪存存储器面临着局限性,这促使人们研究诸如电化学随机访问存储器 (ECRAM) 等替代品.
  • 绕过RRAM由于其离子跳跃导电性,对V-NAND应用具有前景,但多层电池 (MLC) 操作的参数尚未完全理解.

研究的目的:

  • 建立绕过RRAM的设计准则,使其能够实现高度统一的四级单元 (QLC) 操作.
  • 探索量化氧空位 (Vo) 注射对记忆特征的影响.

主要方法:

  • 材料工程被用来精确控制绕道RRAM中的离子迁移.
  • 该研究利用了WO电阻开关 (RS) 层的独特电气特性,以最大限度地减少Vo迁移.
  • 使用MATLAB模拟和实验结果确定了诸如离子屏障 (Ea,ion) 和离子扩散率 (Dion) 等关键参数.

主要成果:

  • 实现低电压操作 (<5V) 和高开/关比 (>106) 与最小的静态度变化 (Δx <0.08).
  • 经过优化参数,QLC性能优越,分布高度均 (σ/μ ∼0.01) 和传感边缘 (ΔG ∼4 μS).
  • 在优化的绕道RRAM中证明没有读取干扰问题.

结论:

  • 开发的设计准则促进了对V-NAND内存的绕过RRAM的高度统一的QLC操作.
  • 纳米级降低的Vo迁移表明,量子化Vo注射可能会扩展到QLC水平之外.
  • 这项研究为下一代V-NAND内存技术的高度均切换提供了途径.