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Updated: Jul 30, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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建立纳米电路通过设计一个结构,以原子短程顺序为高速储能储能

Liting Yang1, Guisheng Liang1, Minmin Liu1

  • 1Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Advanced Coatings Research Center of Ministry of Education of China, Fudan University, Shanghai, 200438, China.

Advanced materials (Deerfield Beach, Fla.)
|March 25, 2025
PubMed
概括

研究人员开发了一种具有内部纳米电路的新型氧化材料. 这种设计使得电子和离子的快速传输成为可能,提高了在高质量负载下储能性能.

关键词:
原子的短距离秩序结构.电子运输是电子的运输.高度的材料材料的使用率.离子扩散是一种离子扩散.离子储能系统是离子储能系统.

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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...