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Updated: May 20, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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在石墨烯双莫雷系统中独立调的平面带和相关性

Yimeng Wang1, Jihang Zhu2, G William Burg1

  • 1The University of Texas at Austin, Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, Texas 78758, USA.

Physical review letters
|March 25, 2025
PubMed
概括

这项研究探讨了石墨烯中的双莫雷系统,揭示了每个双层中独立调节的平面带. 相关的绝缘状态在魔力角度附近是强大的,而间隙状态在更大的扭转角度是受欢迎的.

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