相关实验视频

Updated: May 20, 2025

$In Situ Neutron Powder Diffraction Using Custom-made Lithium-ion Batteries$

In Situ Neutron Powder Diffraction Using Custom-made Lithium-ion Batteries

Published on: November 10, 2014

通过三元兴奋剂和结构障碍实现阳极的快充能力

Yu Zhou¹, Zhijie Wang¹, Penghu Niu¹

¹School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 Jiangsu, China.

Journal of colloid and interface science

|March 25, 2025

概括

阳极中的高合金可提高快充离子电池的导电性和稳定性. 这种无形Si-FeTiP材料表现出极好的速度能力和循环寿命,为先进的电池设计铺平了道路.

科学领域:

材料科学材料科学材料科学
电化学电化学电化学
储能储能储能储能储能储能

背景情况:

(Si) 是离子电池 (LIB) 的一个有前途的阳极材料,因为它的能量密度很高.
阳极的实际应用受到缓慢的动力学和循环过程中显著的体积膨胀的限制.
探索高合金是为了提高电子导电性和减轻Si阳极的体积变化.

研究的目的:

研究高合金和无形结构对Si基阳极的协同效应.
开发一种新的三元兴奋剂合金 (Si-FeTiP) 阳极材料,以提高LIB性能.
了解晶体结构对离子运输和电化学性能的影响.

主要方法:

使用高能球磨加工制备一种无形Si-FeTiP阳极材料.
微晶相 (FeSi2和TiP) 的表征及其分布.
电化学测试以评估速度能力和周期稳定性.

主要成果:

Si-FeTiP 阳极表现出增强的电子导电性和结构稳定性.
无形结构有效地减轻了化诱导的压力,并促进了Li+扩散.
在 10 A g-1 时实现了 658 mAh g-1 的速率能力,在 2 A g-1 时在 500 个循环后保持了 80.3% 的容量.

结论:

无形Si-FeTiP复合材料在快充LIB中表现出优越的电化学性能.
晶体结构在增强离子运输和电池性能方面发挥着至关重要的作用.
为设计先进的多变量基阳极材料提供了见解.

关键词:

快速充电可以快速充电.离子电池是一种离子电池.当地无序的地方无序基于的阳极是基于的阳极.三级兴奋剂的使用.

更多相关视频

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

相关概念视频

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...