AlScN/p-i-n GaN,

Zhiwei Xie1,2, Ke Jiang1,2, Shanli Zhang1,2

  • 1Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China.

概括

研究人员使用AlScN/p-i-n GaN异质连接开发了一种新的紫外线光电子突触. 这种铁电半导体设备模拟了高级人工视觉系统的脑突触.