高级应变适应的牺牲层用于合成独立的矿氧化物膜

Yu Cai1, Ya-Ting Xu1, Meng-Yao Fu1

  • 1Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China.

概括

一种新的矿牺牲层Strontium Manganite (SrMnO3),使高质量的独立的氧化物薄膜成为可能. 它的优越应变适应性和快速溶解使其在柔性电子和半导体领域的应用更加容易.

相关概念视频