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Updated: May 20, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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高温下 GaN 肖特基二极管的电热故障物理 高温下向前偏差

Nahid Sultan Al-Mamun1, Yuxin Du2, Jianan Song2

  • 1Department of Mechanical Engineering, Penn State University, University Park, PA 16802, USA.

Micromachines
|March 27, 2025
PubMed
概括

高温降解化 (GaN) 斯科特基屏障二极管 (SBD) 通过金属-GaN间扩散和缺陷产生. 接口上的这些电热和化学反应会在极端环境中导致设备故障.

关键词:
在GaN Schottky二极管.电热降解GaN的电热降解.高温 GaN 的高温运行.在现场的TEM.的GaN的可靠性.

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Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
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Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
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Schottky Barrier Diode01:27

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