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Updated: May 20, 2025

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带有集成MOS通道二极管的SiC双槽MOSFET可提高第三象限性能

Zhiyu Wang1, Hongshen Wang1, Yuanjie Zhou1

  • 1School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400030, China.

Micromachines
|March 27, 2025
PubMed
概括

这项研究引入了一种具有集成MOS通道二极管 (MCD) 的新型碳化 (SiC) MOSFET. 该设备的设计减少了寄生虫二极管.

关键词:
这是一个MOS通道二极管 (MCD).这是一个SiC MOSFET.双沟的MOSFET可以使用.排水引起的降低屏障效应.

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