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一个完全集成的基于memristor模拟器的memristive混乱电路,带有电压控制的振荡器
Zhikui Duan1, Jiahui Chen1, Shaobo He2
1School of Electronic Information Engineering, Foshan University, Foshan 528225, China.
本研究介绍了一个紧的,集成的memristive混乱电路,使用电压控制振荡器 (VCO) 和memristor模拟器. 高效的设计实现了低功耗和小芯片面积,产生可调节的混乱信号.
科学领域:
- 集成电路 集成电路
- 非线性动力学是一种非线性动力学.
- 混沌理论 混沌理论
背景情况:
- 传统的混乱电路通常使用离散组件,导致更大的足迹和更高的功耗.
- 对于各种应用而言,需要紧且高效的混乱电路.
研究的目的:
- 为了引入一个完全集成的memristive混乱电路.
- 与离散实现相比,为了证明降低功耗和更小的芯片面积.
主要方法:
- 该电路使用电压控制振荡器 (VCO) 来产生信号,并使用一个memristor模拟器作为非线性元件.
- 记忆器模拟器是使用一个操作传导放大器 (OTA),两个晶体管和一个电容器构建的.
- 该VCO包含一个双延迟单元和对增强频率和可调的电流补偿.
主要成果:
- 制造的电路占据了0.0072mm2的芯片面积,使用SMIC 180nm CMOS工艺.
- 记忆器模拟器可运行在高达300 MHz的频率上.
- 混乱电路产生158MHz至286MHz的信号,功耗为3.5553mW,电压为0.9V.
- 利亚普诺夫指数的范围从0.2572到0.4341.
结论:
- 拟议的完全集成的记忆混沌电路提供了一个紧而节能的解决方案.
- 该设计展示了可调节频率范围的混乱振荡信号的有效生成.
- 这项工作有助于为潜在应用开发集成混乱系统.
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