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零功率,高频浮式memristor模拟器电路及其应用
Imen Barraj1, Amel Neifar2, Hassen Mestiri1
1Department of Computer Engineering, College of Computer Engineering and Sciences, Prince Sattam Bin Abdulaziz University, Al-Kharj 11942, Saudi Arabia.
本研究介绍了一种使用DTMOS技术的新型被动浮式memristor模拟器,不需要DC偏差或外部电容. 这种紧的零静电功率电路实现250MHz的运行,非常适合低功率纳米电子应用.
科学领域:
- 纳米电子学纳米电子学
- 固态电路的使用方法
- 电子设备仿真 电子设备仿真
背景情况:
- 记忆器模拟器对于推进纳米电子电路设计至关重要.
- 现有的模拟器通常需要外部组件或DC偏差,从而限制了它们的效率.
- 需要紧,低功耗,高频的memristor仿真解决方案.
研究的目的:
- 为了介绍一个新的被动浮式memristor模拟器.
- 为了展示一个没有外部直流偏差和电容器的设计.
- 为了验证模拟器在低功耗,高频应用中的性能.
主要方法:
- 在电路设计中利用DTMOS (动态值MOSFET) 技术.
- 使用只有四个MOSFET实现模拟器.
- 使用180nmCMOS技术进行全面的分析和模拟.
主要成果:
- 实现了大约250 MHz的高运行频率.
- 证明了零静电消耗.
- 通过模拟在各种电路中的性能验证,如逻辑门,环振荡器和模拟过器.
结论:
- 拟议的被动浮式memristor模拟器是一个紧,高效和可集成的解决方案.
- 它的零静态功率和高运行频率使其适合各种低功率,高频纳米电子应用.
- 基于DTMOS的设计在现有的memristor仿真技术上提供了显著的进步.
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