在脉冲条件下,对提里斯托的短暂热行为进行调查
Guanxiang Zhang1, Xiao Zhang1, Junyong Lu1
1National Key Laboratory of Electromagnetic Energy, Naval University of Engineering, Wuhan 430033, China.
Micromachines
|March 27, 2025
概括
这项研究通过模拟内部电流膨胀来增强脉冲放电的高功率thyristor建模. 改进的模型可以更好地了解电阻的性能,并为苛刻的应用程序进行优化.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 在脉冲放电下,高功率阻器面临模拟挑战,包括高电流增速 (di/dt) 和触发前部扩张.
- 传统的模型往往忽视了晶片内部不均的内部电流分布和扩张.
研究的目的:
- 在脉冲放电条件下开发用于高功率thyristor的先进模拟模型.
- 为了准确地将内部电流分布和扩张纳入thyristor启动分析.
- 为优化对脉冲应用的thyristor选择和设计提供见解.
主要方法:
- 采用二维设备电路共模拟方法来分析电流,温度和热功率分布在螺旋启动期间.
- 根据模拟数据,推导出横向电流膨胀的速度方程.
- 开发了一种三维有限元素模型和复杂的门结构的通用扩展模型.
主要成果:
- 在脉冲放电启动过程中精确模拟电流,温度和热能分布.
- 量化了电阻电流的横向膨胀速度.
- 获得了短暂温度分布,通过各种thyristor的循环激增寿命测试来验证.
结论:
- 开发的模型有效地解决了在脉冲放电下模拟thyristor行为的局限性.
- 这些发现为了解和预测在高压脉冲环境中的电阻性能提供了关键数据.
- 这项研究有助于改进用于脉冲动力应用的thyristor的设计和选择.
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