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Updated: May 20, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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热载体降解的概述 在门周围纳米板晶体管上的热载体降解

Huimei Zhou1

  • 1IBM Research Albany, 257 Fuller Road, Albany, NY 12203, USA.

Micromachines
|March 27, 2025
PubMed
概括

门全方位纳米板晶体管是未来扩展的关键. 本综述涵盖了这些设备中的热载体降解,分析了几何,方向和过程影响,以提高可靠性.

关键词:
角落效应 角落效应 角落效应门 - - 周围的一切.热载体降解降解热载体降解内部间隔器的内部间隔器交叉路口 交叉路口 交叉路口 交叉路口一个纳米板.可靠性的可靠性自加热的自加热器晶体管缩放的扩展

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