通过多波长方法增强的DOF用于基于Moiré边缘的对齐
Kairui Zhang1,2,3,4, Haifeng Sun1,2,3, Dajie Yu1,2,3,4
1National Key Laboratory of Optical Field Manipulation Science and Technology, Chinese Academy of Sciences, Chengdu 610209, China.
Micromachines
|March 27, 2025
概括
这项研究通过使用多波长照明来提高焦点深度 (DOF) 来增强Moiré边缘对齐用于光刻. 这种新的方法在很大的对齐范围内保持纳米级准确度,克服了间隙灵敏度.
科学领域:
- 半导体制造业 半导体制造业
- 光学计量学 在光学计量学
- 石版画系统 石版画系统
背景情况:
- 排列系统对于石版的重叠精度至关重要.
- 莫伊尔边缘对齐提供了高精度和简单性,但对晶圆罩间隙变化敏感.
研究的目的:
- 为了提高Moiré基于边缘的对齐系统的性能.
- 为了提高光刻对齐的焦点深度 (DOF).
- 为了保持纳米级准确度,尽管差距变化.
主要方法:
- 实施了多波长照明方法,用于对齐标记.
- 利用改进的相位分析算法来处理Moiré边缘对比度.
- 计算Moiré边缘位移以实现精确的对齐.
主要成果:
- 在1000微米的对齐范围内,实现了超过400微米的有效焦点深度.
- 证明了对齐精度保持在纳米级别,不受差距变化的影响.
- 通过参数优化表明了进一步扩展对齐DOF的潜力.
结论:
- 拟议的多波长方法显著提高了Moiré边缘对齐的焦点深度.
- 这种方法克服了间隙灵敏度的限制,确保了光刻的高精度.
- 该技术为先进的半导体制造工艺提供了强大的解决方案.
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