基于亚-5nm单层KMgX (X = P,As,Sb) 的同质CMOS设备,用于高性能应用
Yandong Guo1,2, Yuting Guo1, Zhipeng Huan1
1College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.
Nanoscale
|March 27, 2025
概括
单层KMgX材料对未来的电子产品充满希望,在超越的晶体管中提供对称性能. 这些材料满足5nm以下设备的严格要求,为先进的CMOS电子铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体设备物理 半导体设备物理
背景情况:
- 基于的CMOS电子面临着扩展限制.
- 下一代电子产品需要新的通道材料来提高性能和对称性.
- 原子薄的材料为超级晶体管提供了潜力.
研究的目的:
- 为了研究5nm以下单层KMgX (X = P,As,Sb) 金属氧化物半导体场效应晶体管 (MOSFETs) 的设备性能极限.
- 评估这些材料对未来同质CMOS电子产品的潜力.
- 评估n型和p型KMgX MOSFET的对称性能特征.
主要方法:
- 使用第一原则计算来模拟和分析设备性能.
- 模拟了双门KMgX MOSFET结构,通道长度低至3nm.
- 评估了关键性能指标,包括ON状态电流,下值波动和功率延迟产品.
主要成果:
- 所有三个KMgX配置 (X = P,As,Sb) 都符合ITRS 2013对2028高性能应用的要求,即使在3纳米的网关长度.
- 开启状态电流超过了大多数先前报告的单层MOSFET的电流.
- 对于5nm长的n型KMgSb (3463 μA μm−1) 和KMgAs (3248 μA μm−1) MOSFET,观察到超高的ON状态电流.
- 性能指标的高对称性 (下值波动,启动状态电流等) 在n型和p型设备之间进行了证明.
结论:
- 单层KMgX (X = P,As,Sb) 是非常适合用于5nm以下同质CMOS电子的通道材料.
- 这些材料提供了出色的对称性性能和电子和孔的高流动性.
- 调查的KMgX MOSFET表现出卓越的性能特性,使下一代超级晶体管的开发成为可能.
相关概念视频
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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