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不易挥发的可重新配置的四模范德瓦尔斯晶体管和可转换的逻辑电路

Junzhe Kang¹, Hanwool Lee¹, Ashwin Tunga¹

¹Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.

|March 27, 2025

概括

我们使用2D MoTe2和CIPS开发了新的非挥发性可重新配置的四模场效应晶体管 (NVR4M-FETs). 这些晶体管可实现高密度,高能效的逻辑电路,用于先进的计算和安全应用.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
计算机工程计算机工程

背景情况:

新兴应用需要具有高功能密度,可重配置性和能效的逻辑电路.
现有的技术在实现这些组合功能方面存在局限性.

研究的目的:

为了展示新的非挥发性可重新配置的四模场效应晶体管 (NVR4M-FETs).
探索NVR4M-FETs在先进计算和安全硬件应用中的潜力.

主要方法:

使用二维 (2D) MoTe2 和 CuInP2S6 (CIPS) 制造NVR4M-FET.
利用CIPS铁电极化用于动态晶体管极性切换 (n型和p型).
集成多层石墨烯浮式门用于值电压调制,使四种不同的非挥发性操作模式成为可能.

主要成果:

实现了具有四种不同的非挥发性操作模式的晶体管:n型逻辑,p型逻辑,始终启动的内存和始终关闭的内存.
证明了NVR4M-FET作为一个晶体管每位三元内容可定位存储器 (TCAM).
构建了可转换的逻辑门 (14 个功能) 和一个可重新配置的半加减器.
展示了使用8个NVR4M-FET的2输入查看表,其性能优于传统的可重新配置晶体管.

结论:

NVR4M-FET为高密度,节能逻辑电路提供了一个有前途的平台.
这些设备适用于内存计算和安全硬件应用.
展示的四种模式功能显著提高了电路设计灵活性和性能.

关键词:

添加器和减去器的增加和减去器.铁电装置是一种铁电装置.在内存计算中的内存计算.查看表格的表格.可重新配置的四模晶体管.三元内容可定位存储器

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