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Updated: Apr 30, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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在H相NbTe2中的双胞胎镜子双边界

Xiaocang Han1, Jing-Yang You2, Ziyi Han1

  • 1School of Materials Science and Engineering, Peking University, Beijing 100871, China.

Nano letters
|March 27, 2025
PubMed
概括

研究人员开发了一种简单的方法,在过渡金属二二烯化物 (TMD) 中创建高密度配对的镜子双边界 (MTB). 这一突破可以通过控制这些独特的粒度边界来设计先进的量子设备.

关键词:
镜子双胞胎边界的边界.阶段进化阶段的演变.扫描传输电子显微镜扫描传输电子显微镜超导性是一种超导性.过渡金属二甲基二甲基化物

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