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Updated: Jul 24, 2026

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在多层 PdSe2 场效应晶体管中进行界面热传输和能量消耗

Jiaqiu Xie1, Zehao Yu1, Yuanchen Sun1

  • 1Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China.

Advanced materials (Deerfield Beach, Fla.)
|March 31, 2025
PubMed
概括

本研究探讨了二化 (PdSe2) 场效应晶体管 (FET) 中的能量消耗. PdSe2 FET表现出高电流密度和低热边界导电量,这表明通过界面优化可以提高性能.

关键词:
在PdSe2中,PdSe2是什么?电气故障发生的情况.能量消耗 能量消耗热边界导电性 (TBC) 是指热边界导电性.

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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
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P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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